Noise in nanometer-scale electronic devices

被引：0

作者：

Nishiguchi, Katsuhiko ^{[1
]}

Fujiwara, Akira ^{[1
]}

机构：

[1] Physical Science Laboratory, Nanodevices Research Group, NTT Basic Research Laboratories

来源：

NTT Technical Review | 2015年 / 13卷 / 08期

关键词：

Noise; Single electron; Transistor;

D O I：

10.53829/ntr201508fa3

中图分类号：

学科分类号：

摘要：

Downsizing electronic devices in integrated circuits increases the noise-related degradation of circuit performance, and thus, it is becoming more important to analyze noise with single-electron resolution. We discuss here the use of a nanometer-scale transistor and capacitor in analyzing thermal noise, one of the most fundamental types of noise in electronic devices, with single-electron resolution. When the capacitor size is substantially reduced, the well-known model of thermal noise is no longer valid, and voltage noise is squeezed. Copyright © 2015 NTT Technical Review.

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