Resistance switching mechanism of bistable memory device based on ZnO/PVP modified by PbS nanocrystal

被引：0
|
作者：
Shi, Qing-Liang [1 ]
Xu, Jian-Ping [1 ]
Wang, Xue-Liang [1 ]
Wang, You-Wei [1 ]
Jiang, Li-Fang [1 ]
Zhu, Ming-Xue [1 ]
Hong, Yuan [1 ]
Li, Lan [1 ]
机构：
[1] Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Tianjin University of Technology, Tianjin 300384, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2014年 / 35卷 / 07期
关键词：
Bistable memory devices - Carrier transportation - Electrical bistable - Modification layers - Orders of magnitude - Organic/inorganic composites - Resistance switching mechanisms - ZnO nanocrystal;
D O I：
10.3788/fgxb20143507.0846
中图分类号：
学科分类号：
摘要：
An organic/inorganic composite electrical bistable device with the sandwich structure of ITO/PVP/ZnO nanocrystal (NCs)/PbS nanocrystal (NCs)/PVP/Al was fabricated. Compared with the device structure of ITO/PVP/ZnO NPs/PVP/Al, the ON/OFF ratio of target device was improved by 2 orders of magnitude. The carrier transportation and resistance switching mechanism of device were discussed via I-V characteristics and the energy band structures of the devices. The effective capture/release of electrons could be attributed to the optimization of device structure and modification of ZnO NCs surface by PbS NCs layer.
引用
收藏
页码：846 / 852
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