Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization

被引：0
作者：
Okamoto, Naoki [1 ]
Wang, Xiaoqian [2 ]
Morita, Kotaro [1 ]
Kato, Yuto [1 ]
Alom, Mir Mutakabbir [2 ]
Magari, Yusaku [3 ]
Furuta, Mamoru [4 ]
机构：
[1] Kochi Univ Technol, Mat Sci & Engn Course, Kochi 7828502, Japan
[2] Kochi Univ Technol, Engn Course, Kochi 7828502, Japan
[3] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan
[4] Kochi Univ Technol, Ctr Nanotechnol Res Inst, Scool Engn Sci, Kochi 7828502, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期
关键词：
Polycrystalline oxide semiconductor; indium oxide; thin-film transistor; solid-phase crystallization; grain boundary; uniformity; reliability; ELECTRICAL-PROPERTIES;
D O I：
10.1109/LED.2024.3480991
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bottom-gate thin-film transistor (TFT) with hydrogen-doped polycrystalline indium oxide (poly-InOx:H) channel was fabricated to investigate the uniformity and reliability of the TFT. The carrier density (N-e) of the poly-InOx:H film markedly decreased after solid-phase crystallization in air at 300 degrees C, and a nondegenerate poly-InOx:H film with N-e of 1.7 x 10(17) cm(-3) could be achieved. The TFT with a 30-nm-thick poly-InOx:H channel operated in enhancement mode (E-mode) after post-fabrication annealing at more than 300 degrees C. The poly-InOx:H TFT exhibited good short-range uniformities with a field-effect mobility (mu(FE)) of 32.0 +/- 0.39 (3 sigma) cm(2)/Vs and a threshold voltage (V-t) of 0.58 +/- 0.18 (3 sigma) V. Furthermore, no threshold voltage shift was observed under negative gate bias and temperature stress at 60 degrees C for 6,000 s.
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页码：2403 / 2406
页数：4
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