Interfacial characterization of non-metal precipitates at grain boundaries in cast multicrystalline silicon crystals

被引:0
|
作者
Lv, Xiang [1 ,2 ,4 ]
Li, Hangfei [1 ,2 ]
Ding, Degong [1 ,2 ]
Yu, Xuegong [1 ,2 ,3 ]
Jin, Chuanhong [1 ,2 ,4 ]
Yang, Deren [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 310014, Zhejiang, Peoples R China
[4] Jihua Lab, Foshan 528200, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon; Cast-mono; Precipitate; SiC; Si3N4; Grain boundary; IMPURITIES; SEGREGATION; INCLUSIONS; DIFFUSION; REMOVAL; GROWTH; MELT;
D O I
10.1016/j.jcrysgro.2024.128042
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Silicon carbide (SiC) and silicon nitride (Si3N4) are two major non-metal precipitates commonly found along grain boundaries (GBs) in cast multicrystalline silicon (mc-Si) crystals. SiC precipitates are known to cause significant leakage current, which can adversely affect the performance of solar cells. Although Si3N4 itself is electrically inactive, it serves as a heterogeneous nucleation site for SiC, therefore indirectly compromising solar cell efficiency. Despite the impact, the interface structure and formation mechanisms of these precipitates at grain boundaries remain poorly understood. This study employs high-resolution transmission electron microscopy (HRTEM) to investigate the atomic-scale interface structures of SiC and Si3N4 precipitates at GBs in mc-Si crystals. Results indicate that SiC primarily exists in the cubic phase (beta-SiC), while Si3N4 is predominantly in hexagonal phase (alpha-Si3N4). Two distinct interface structures, and consequently different strain states, are observed between the precipitate (beta-SiC, alpha-Si3N4) and the Si matrix. The first type is an abrupt interface with a crystallographic relationship of (100)(beta-SiC)//(100)(Si) and a high strain band at the interface. In the second type, an intermediate phase is inserted between the beta-SiC and Si interface, exhibiting a crystallographic relationship of (011)(beta-SiC)//(111)(Si) and a strain-free state. Similar intermediate areas are also identified in alpha-Si3N4/Si and alpha-Si3N4/beta-SiC interfaces, with crystallographic relationship of (001)(alpha-Si3N4)//(221)(Si) and (010)(alpha-Si3N4)//(111)(beta-SiC), respectively. These intermediates regions significantly reduce associated interfacial strains. A hetero-epitaxial growth mechanism is proposed to explain the formation of SiC and Si3N4 precipitates in mc-Si, driven by interfacial lattice mismatch induced stress that is greatly relieved by the presence of intermediate areas in between the phases. This research provides in-depth insights into the formation mechanism of these precipitates and potential avenues for their property tailoring.
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页数:6
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