共 4 条
- [1] Erratum: AgGaGeS4 crystals for nonlinear laser device applications (Japanese Journal of Applied Physics (2006) 45 (5795)) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (11):
- [2] Erratum: Influence of dopant compounds on the storage mechanism of CaS:Eu2+, Sm3+ (Journal Applied Physics (2006) 100 (073701)) Journal of Applied Physics, 1600, 100 (12):
- [3] Erratum: Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates (Journal of Applied Physics (2006) 100 (023537)) Journal of Applied Physics, 1600, 100 (12):
- [4] Erratum: Comment on 'Band gap bowing and electron localization of Ga XIn1-XN' [J. Appl. Phys. 100, 093717 (2006)] (Journal of Applied Physics (2008) 103 (096101)) Journal of Applied Physics, 2008, 104 (03):