Electromigration-induced plasticity in Cu interconnects: The texture dependence

被引：0
作者：
Budiman, Arief Suriadi [1 ]
机构：
[1] Singapore University of Technology and Design, Singapore
来源：
SpringerBriefs in Applied Sciences and Technology | 2015年 / 0卷 / 9789812873347期
关键词：
Dielectric; Elasticity; Electromigration stress; Interconnect; Texture; μXRD;
D O I：
10.1007/978-981-287-335-4_4
中图分类号：
学科分类号：
摘要：
The discussion of the peculiarities of electromigration in Cu interconnects is continued in this chapter. It is shown that the interconnect texture is an important factor, governing the plastic response of Cu grains to the electrical current. The degree of the plastic response is proportional with the availability of 〈112〉 direction in Cu crystals along the direction of the current. Hence, (111) out-of-plane orientation of Cu grains increases the plastic effect of electromigration, while the presence of the grains with a different orientation could weaken it. © 2015, The Author(s).
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页码：53 / 67
页数：14
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