Deposition and property characterization of indium-tin oxide films for solar cells fabrication

被引：0
|
作者：
机构：
[1] Applied Physics Department, Beijing University of Technology
[2] Center of Condensed Physics and Material Physics, School of Physics and Nuclear Engineering, Beihang University
来源：
Cui, M. (mcui@bjut.edu.cn) | 1600年 / Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China卷 / 32期
关键词：
DC magnetron reactive sputtering; ITO films; Solar cells; Technical parameters;
D O I：
10.3969/j.issn.1672-7126.2012.08.20
中图分类号：
学科分类号：
摘要：
The indium-tin oxide (ITO) films were deposited by reactive DC magnetron sputtering on glass substrate. The impacts of the film growth conditions, such as the oxygen flow rate, pressure, sputter power, deposition rate, and substrate temperature, on the microstructures, electrical and optical properties of the ITO films were evaluated. The ITO films, to be used as the antireflection layer, electrode coatings of the solar cell, were grown under the following optimized conditions: oxygen flow rate of 0.2 ml/min, a pressure of 3 Pa, a sputtering current of 0.2 A, and its resistivity and transmittance (550 nm) were found to be 3.7×10 -3 Ω·cm, and 93.3%, respectively. The solar cells, fabricated with the ITO/n +-nc-Si:H/i-nc-Si:H/p-c-Si/Ag structure, possess the optimized specifications, including an open circuit voltage V oc of 534.7 mV, a short-circuit current I sc of 49.24 mA(3 cm 2), and a fill factor FF of 0.4228.
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页码：763 / 766
页数：3
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