High power 808 nm laser diode with 62% wall-plug efficiency

被引：0

作者：

Li P. ^{[1
,2
]}

Jiang K. ^{[1
,2
]}

Zhang X. ^{[1
]}

Tang Q. ^{[1
]}

Xia W. ^{[1
,2
]}

Li S. ^{[1
,2
]}

Ren Z. ^{[1
]}

Xu X. ^{[1
,2
]}

机构：

[1] Shandong Huaguang Optoelectronics Co. Ltd., Jinan

[2] State Key Lab. of Crystal Material, Shandong University, Jinan

来源：

Guangxue Xuebao/Acta Optica Sinica | 2011年 / 31卷 / SUPPL.1期

关键词：

GaAsP/GaInP/AlGaInP; Low pressure metal organic chemical vapor deposition; Semiconductor laser; Wall-plug efficiency;

D O I：

10.3788/AOS201131.s100308

中图分类号：

学科分类号：

摘要：

Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition (MOCVD) growth condition. By low pressure (LP) MOCVD, GaAsP/GaInP/AlGaInP strained quantum well large optical cavity structure is grown, and high power continuous wave (CW) 808 nm laser diode is fabricated. At 25°C under CW operation condition, an output power of 11.5 W is obtained at 10 A current, with the threshold current being 1.15 A. The wall-plug efficiency reaches 62%. With the operation current of 5.5 A at 40°C, less than 2% output power degenerates over 1000 h.

引用

共 7 条

[1] Qu Y., Yuan S., Liu C., Et al., High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm, Photon. Technol. Lett., 16, 2, pp. 389-391, (2004)
[2] Huang R.K., Chann B., Missaggia L.J., Et al., High-brightness wavelength beam combined semiconductor laser diode arrays, Photon. Technol. Lett., 19, 4, pp. 209-211, (2007)
[3] Yang H., Huang K., Chen H., Et al., High efficiency CW 1000 W semiconductor laser stack array, Semiconductor Technology, 35, 4, pp. 340-343, (2010)
[4] Li C., Liu Y., Song X., Et al., Recent development of high-efficiency high-brightness semiconductor lasers, Semiconductor Technology, 33, 9, pp. 748-751, (2008)
[5] Xin G., Qu R., Fang Z., Et al., New development of high power semiconductor lasers, Laser & Optoelectronics Progress, 43, 2, pp. 3-8, (2006)
[6] Li P., Wang L., Li S., Et al., MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power, Chin. Opt. Lett., 7, 6, pp. 489-491, (2009)
[7] Li P., Jiang K., Li S., Et al., Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode, Chin. Opt. Lett., 8, 5, pp. 493-495, (2010)

← 1 →