Plasma Treatment to Improve Chemical Vapor Deposition-Grown Graphene to Metal Electrode Contact

被引：14

作者：

Kwon, Taesoo ^{[1
]}

An, Hyosub ^{[1
]}

Seo, Young-Soo ^{[1
]}

Jung, Jongwan ^{[1
]}

机构：

[1] Sejong Univ, Graphene Res Inst, Inst Nano & Adv Mat Engn, Seoul 143747, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

LARGE-AREA; RESISTANCE; FILMS;

D O I：

10.1143/JJAP.51.04DN04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that contact properties of chemical vapor deposition (CVD)-grown graphene to metal electrode can be improved with Ar plasma treatment before metal electrode deposition. The Ar plasma treatment reduced the baseline signal of the Raman spectrum of graphene without changing main peaks of 2D and G peak and increasing D peak, supporting its effectiveness to reduce the polymer residue. Transfer length method (TLM) patterns for the plasma-treated samples exhibit more linear and neat current-voltage curve, and lower contact resistance compared with the control one (no plasma treated sample). These results support that plasma treatment is effective to improve the graphene-metal contact properties by reducing interface polymer residue. (C) 2012 The Japan Society of Applied Physics

引用

页数：4