Bandgap voltage reference for IRFPA readout integrated circuit

被引：0

作者：

Zhao, Gongyuan ^{[1
]}

Zhao, Yiqiang ^{[1
]}

机构：

[1] ASIC Design Center, School of Electronic and Information Engineering, Tianjin University, Tianjin,300072, China

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2015年 / 44卷 / 09期

关键词：

Electric power utilization - MOS devices - Voltage measurement - Oxide semiconductors - Timing circuits - Low power electronics - Energy gap - CMOS integrated circuits - Metals - Temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel high precision, low power and area economic current mode complementary metal-oxide-semiconductor (CMOS) bandgap voltage reference used in uncooled infrared focal plane array (IRFPA) systems was presented in this work. The proposed BGR contained two type of resistors with the opposite temperature coefficients (TCs), which could compensate the BGR's high order curvature error and obtain better TC. This paper illustrated a cascaded structure without a traditional op-amp, achieving low power consumption as well as excellent power supply reject ratio(PSRR). This circuit was implemented in a standard 0.18 μm CMOS process. The simulation results have confirmed that the proposed BGR operates with a supply voltage of 3.3 V, consuming 6.3 μA at room temperature, and the output voltage reference temperature coefficient is about 3.7 ppm/℃ from -40℃ to 120℃. The BGR can achieve a PSRR about -78 dB@1 kHz, consuming only 230 μm×100 μm chip area. This proposed BGR is a low-power and area economic design. ©, 2015, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

引用

页码：2627 / 2632