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Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/ n -GaAs diode
被引：0
作者：
机构：
[1] Ejderha, K.
[2] Duman, S.
[3] Nuhoglu, C.
[4] Urhan, F.
[5] Turut, A.
来源：
Duman, S.
|
1600年
/
American Institute of Physics Inc.卷
/
116期
关键词：
In this study;
Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current-voltage;
capacitance-voltage;
and conductance-voltage characteristics of Ti/n-GaAs diode have been investigated in the temperature range of 80-320 K. The ideality factor and barrier height values have been calculated from the forward current-voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance-voltage characteristics have been measured to calculate the carrier concentration;
diffusion potential;
barrier height;
and temperature coefficient of the barrier height (α = -0.65 meV K-1). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity. © 2014 AIP Publishing LLC;
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Journal article (JA)
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