Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

被引：1

作者：

Kil, Tae-Hyun ^{[1
]}

Yeon, Ju-Won ^{[1
]}

Park, Hyo-Jun ^{[1
]}

Lee, Moon-Kwon ^{[1
]}

Yun, Eui-Cheol ^{[1
]}

Kim, Min-Woo ^{[1
]}

Kang, Sang-Min ^{[1
]}

Park, Jun-Young ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Sch Semicond Engn, Cheongju 28644, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷

基金：

新加坡国家研究基金会;

关键词：

Annealing; Logic gates; Stress; Deuterium; Dielectrics; MOSFET; Silicon; Hafnium oxide; Performance evaluation; Reliability; high-k dielectric; hot-carrier injection (HCI); low-temperature deuterium annealing (LTDA); MOSFETs; positive bias stress (PBS); reliability; INSTABILITY; HYDROGEN; IMPACT;

D O I：

10.1109/JEDS.2024.3502738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, low-temperature deuterium annealing (LTDA) at 300 degrees C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H-2) annealing under identical conditions is conducted to evaluate the specific impact of deuterium (D-2). Comprehensive DC characterizations and evaluations of stress immunity under hot-carrier injection (HCI) and positive bias stress (PBS) conditions, are performed. The results confirm that even at a low temperature of 300 degrees C, D-2 has a more substantial effect on device performance and reliability compared to H-2. This study provides a guideline for reducing the annealing temperature in the fabrication of HKMG MOSFETs.

引用

页码：1030 / 1033

页数：4

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