Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

被引：0
|
作者：
Lee, Gieop [1 ]
Cha, An-Na [1 ,2 ]
Cho, Sea [1 ]
Chung, Jeong Soo [1 ]
Moon, Young-Boo [4 ]
Ha, Jun-Seok [1 ,2 ,3 ]
机构：
[1] School of Chemical Engineering, Chonnam National University, Gwangju,61186, Korea, Republic of
[2] Energy Convergence Core Facility, Chonnam National University, Gwangju,61186, Korea, Republic of
[3] Optoelectronics Convergence Research Center, Chonnam National University, Gwangju,61186, Korea, Republic of
[4] UJL Inc., Siheung,15101, Korea, Republic of
来源：
Crystal Growth and Design | 2024年 / 24卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：205 / 213
相关论文
共 50 条
  • [1] Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy
    Lee, Gieop
    Cha, An-Na
    Cho, Sea
    Chung, Jeong Soo
    Moon, Young-Boo
    Ha, Jun-Seok
    CRYSTAL GROWTH & DESIGN, 2023, 24 (01) : 205 - 213
  • [2] Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy
    S. I. Stepanov
    A. I. Pechnikov
    M. P. Scheglov
    A. V. Chikiryaka
    V. I. Nikolaev
    Technical Physics Letters, 2023, 49 : S142 - S145
  • [3] Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy
    Stepanov, S. I.
    Pechnikov, A. I.
    Scheglov, M. P.
    Chikiryaka, A. V.
    Nikolaev, V. I.
    TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 2) : S142 - S145
  • [4] Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates
    Goto, Ken
    Nakahata, Hidetoshi
    Murakami, Hisashi
    Kumagai, Yoshinao
    APPLIED PHYSICS LETTERS, 2020, 117 (22)
  • [5] Microstructural analysis of heteroepitaxial β-Ga2O3 films grown on (0001) sapphire by halide vapor phase epitaxy
    Li, Yuewen
    Xiu, Xiangqian
    Xu, Wanli
    Zhang, Liying
    Xie, Zili
    Tao, Tao
    Chen, Peng
    Liu, Bin
    Zhang, Rong
    Zheng, Youdou
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (01)
  • [6] Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
    Modak, Sushrut
    Lundh, James Spencer
    Al-Mamun, Nahid Sultan
    Chernyak, Leonid
    Haque, Aman
    Thieu Quang Tu
    Kuramata, Akito
    Tadjer, Marko J.
    Pearton, Stephen J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (06):
  • [7] Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
    A. I. Pechnikov
    S. I. Stepanov
    A. V. Chikiryaka
    M. P. Scheglov
    M. A. Odnobludov
    V. I. Nikolaev
    Semiconductors, 2019, 53 : 780 - 783
  • [8] Thick -Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
    Pechnikov, A. I.
    Stepanov, S. I.
    Chikiryaka, A. V.
    Scheglov, M. P.
    Odnobludov, M. A.
    Nikolaev, V. I.
    SEMICONDUCTORS, 2019, 53 (06) : 780 - 783
  • [9] Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy
    Oshima, Yuichi
    Villora, Encarnacion G.
    Shimamura, Kiyoshi
    JOURNAL OF CRYSTAL GROWTH, 2015, 410 : 53 - 58
  • [10] Growth of β-Ga2O3 Films on Sapphire by Hydride Vapor Phase Epitaxy
    熊泽宁
    修向前
    李悦文
    华雪梅
    谢自力
    陈鹏
    刘斌
    韩平
    张荣
    郑有炓
    Chinese Physics Letters, 2018, 35 (05) : 162 - 164
12345