Two-Bit/cell characteristics of silicon-oxide-nitride-oxide-silicon flash memory devices with recessed channel structure

被引：0
|
作者：
Han, Kyoung-Rok [1 ]
Lee, Jong-Ho [1 ]
机构：
[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
关键词：
17;
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摘要：
Journal article (JA)
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页码：2687 / 2691
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