Effect of working gas pressure on the optical properties of RF-PECVD a-Si:H films

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作者：

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China ^{[1
]}

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来源：

Guangdianzi Jiguang | 2008年 / 3卷 / 352-356期

关键词：

Amorphous silicon - Atomic force microscopy - Deposition rates - Film thickness - Fourier transform infrared spectroscopy - Microstructure - Optical band gaps - Optical properties - Plasma enhanced chemical vapor deposition - Refractive index - Scanning electron microscopy - X ray diffraction analysis;

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