Optimizing polymorphous silicon back surface field of a-Si(n)/c-Si(p) heterojunction solar cells by simulation

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Lab. of Solar Cell Technology, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100080, China ^{[1
]}

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Wuli Xuebao | 2008年 / 5卷 / 3212-3218期

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摘要：

Back surface field (BSF) effect of polymorphous silicon with different band gaps on a-Si(n)/c-Si(p) heterojunction solar cell was simulated and analyzed by utilizing AFORS-HET software. It was predicted that the polymorphous silicon capable of producing the optimal BSF effect is the microcrystalline silicon with band gap of 1.6 eV, the doped concentration of 1018 cm-3 and the thickness about 5 nm. Such microcrystalline silicon BSF is easy to realize in practice. It makes the efficiency of solar cell much higher than that using the conventional Al BSF with the same doping concentration.

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