The study of N-polar GaN films grown by MOCVD

被引：0
|
作者：
Li, Liang [1 ]
Luo, Wei-Ke [1 ]
Li, Zhong-Hui [1 ]
Dong, Xun [1 ]
Peng, Da-Qing [1 ]
Zhang, Dong-Guo [1 ]
机构：
[1] Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2013年 / 34卷 / 11期
关键词：
16;
D O I：
10.3788/fgxb20133411.1500
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1500 / 1504
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