Modeling of deep reactive ion etching by inductively coupled plasma with string algorithm

被引：0

作者：

Department of Applied Physics, Hefei University of Technology, Hefei 230009, China ^{[1
]}

机构：

来源：

Zhenkong Kexue yu Jishu Xuebao | 2008年 / 5卷 / 481-485期

关键词：

Inductively coupled plasma;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] Deep Etching of LiNbO3 Using Inductively Coupled Plasma in SF6-Based Gas Mixture [J].

Osipov, Artem A. ;

Osipov, Armenak A. ;

Iankevich, Gleb A. ;

Speshilova, Anastasiya B. ;

Shakhmin, Alexander ;

Berezenko, Vladimir I. ;

Alexandrov, Sergey E. .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2021, 30 (01) :90-95

[22] Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching [J].

Lee, JH ;

Yoon, HS ;

Shim, JY ;

Kim, HC .

THIN SOLID FILMS, 2003, 435 (1-2) :139-144

[23] Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching [J].

Lin, Guangyang ;

Cui, Peng ;

Wang, Tao ;

Hickey, Ryan ;

Zhang, Jie ;

Zhao, Haochen ;

Kolodzey, James ;

Zeng, Yuping .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2021, 20 :846-851

[24] Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching [J].

Zhang, Yi ;

Li, Rulin ;

Zhang, Yongjie ;

Liu, Dianzi ;

Deng, Hui .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2019, 39 (09) :2831-2838

[25] Radical behavior in inductively coupled fluorocarbon plasma for SiO2 etching [J].

Hayashi, S ;

Nakagawa, H ;

Yamanaka, M ;

Kubota, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B) :4845-4848

[26] Inductively coupled plasma and electron cyclotron resonance plasma etching of an InGaAlP compound semiconductor system [J].

Hong, J ;

Lambers, ES ;

Abernathy, CR ;

Pearton, SJ ;

Shul, RJ ;

Hobson, WS .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1998, 23 (04) :323-396

[27] Correction algorithm of edge effects in inductively coupled plasma processing [J].

Zhang, Shiyang ;

Fan, Bin ;

Wang, Yongjian ;

Xin, Qiang ;

Wu, Jie .

OPTIK, 2020, 223

[28] A pulsed inductively coupled plasma source for plasma-based ion implantation [J].

Tuszewski, M ;

Scheuer, JT ;

Adler, RA .

SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3) :203-208

[29] SiO2 etching employing inductively coupled plasma with hot inner wall [J].

Chinzei, Y ;

Ichiki, T ;

Kurosaki, R ;

Kikuchi, J ;

Ikegami, N ;

Fukazawa, T ;

Shindo, H ;

Horiike, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B) :2472-2476

[30] Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor [J].

An YiRan ;

Lu YiJia ;

Li DongSan ;

Chen YaoSong .

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2008, 51 (06) :674-682

← 1 2 3 4 5 →