Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation

被引：0
|
作者：
Yoon, Young Jun [1 ]
Cho, Seongjae [3 ]
Seo, Jae Hwa [2 ]
Kang, In Man [1 ,2 ]
Park, Byung-Gook [4 ]
Lee, Jung-Hee [1 ,2 ]
机构：
[1] School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea, Republic of
[2] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
[3] Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States
[4] Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 4 PART 2期
关键词：
Compound semiconductors - Current drivability - Cut-off frequency (fT) - Device performance - High-performance operation - On state current - Radio frequencies - Subthreshold swing;
D O I：
04CC04
中图分类号：
学科分类号：
摘要：
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