Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation

被引：0
|
作者：
Yoon, Young Jun [1 ]
Cho, Seongjae [3 ]
Seo, Jae Hwa [2 ]
Kang, In Man [1 ,2 ]
Park, Byung-Gook [4 ]
Lee, Jung-Hee [1 ,2 ]
机构：
[1] School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea, Republic of
[2] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
[3] Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States
[4] Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 4 PART 2期
关键词：
Compound semiconductors - Current drivability - Cut-off frequency (fT) - Device performance - High-performance operation - On state current - Radio frequencies - Subthreshold swing;
D O I：
04CC04
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
    Britnell, L.
    Gorbachev, R. V.
    Jalil, R.
    Belle, B. D.
    Schedin, F.
    Mishchenko, A.
    Georgiou, T.
    Katsnelson, M. I.
    Eaves, L.
    Morozov, S. V.
    Peres, N. M. R.
    Leist, J.
    Geim, A. K.
    Novoselov, K. S.
    Ponomarenko, L. A.
    SCIENCE, 2012, 335 (6071) : 947 - 950
  • [22] The Structural Performance of a Novel Double-Stacked Heterogeneous Gate Heterojunction Tunneling Field-Effect Transistor
    Chen, Qing
    Liu, Hanxiao
    Miao, Ruixia
    Sun, Rong
    Yang, Lulu
    Qi, Zengwei
    Yang, Xiaofeng
    He, Wei
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (04):
  • [23] Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications
    Yoon, Young Jun
    Seo, Jae Hwa
    Lee, Hwan Gi
    Yoo, Gwan Min
    Kim, Young Jae
    Kim, Sung Yoon
    Woo, Sung Yun
    Roh, Hee Bum
    Eun, Hye Rim
    Kang, Hye Su
    Cho, Seongjae
    Cho, Eou-Sik
    Bae, Jin-Hyuk
    Lee, Jung-Hee
    Kang, In Man
    2014 SIXTH INTERNATIONAL CONFERENCE ON MEASURING TECHNOLOGY AND MECHATRONICS AUTOMATION (ICMTMA), 2014, : 95 - 98
  • [24] High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
    Kim, Garam
    Lee, Jaehong
    Kim, Jang Hyun
    Kim, Sangwan
    MICROMACHINES, 2019, 10 (02)
  • [25] High-performance Recessed-channel Reconfigurable Field-effect Transistor using Si-Ge Heterojunction
    Kim, Sangwook
    Kim, Sangwan
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18 (03) : 392 - 395
  • [26] Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)
    Seo, Jae Hwa
    Yoon, Young Jun
    Kang, In Man
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (09) : 6602 - 6605
  • [27] Auger generation as an intrinsic limit to tunneling field-effect transistor performance
    Teherani, James T.
    Agarwal, Sapan
    Chern, Winston
    Solomon, Paul M.
    Yablonovitch, Eli
    Antoniadis, Dimitri A.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [28] Analysis of the performance of the quantum wire resonant tunneling field-effect transistor
    Yang, D
    Khurgin, JB
    SUPERLATTICES AND MICROSTRUCTURES, 2000, 27 (04) : 245 - 254
  • [29] HIGH-PERFORMANCE OF INDUCED-CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET)
    MAND, RS
    EICHER, S
    SPRINGTHORPE, AJ
    ELECTRONICS LETTERS, 1989, 25 (06) : 386 - 387
  • [30] T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor
    Dubey, Prabhat Kumar
    Kaushik, Brajesh Kumar
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3120 - 3125
12345