Compound Semiconductor tunneling field-effect transistor based on ge/gaas heterojunction with tunneling-boost layer for high-performance operation

被引：0
|
作者：
Yoon, Young Jun [1 ]
Cho, Seongjae [3 ]
Seo, Jae Hwa [2 ]
Kang, In Man [1 ,2 ]
Park, Byung-Gook [4 ]
Lee, Jung-Hee [1 ,2 ]
机构：
[1] School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea, Republic of
[2] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
[3] Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States
[4] Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 4 PART 2期
关键词：
Compound semiconductors - Current drivability - Cut-off frequency (fT) - Device performance - High-performance operation - On state current - Radio frequencies - Subthreshold swing;
D O I：
04CC04
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation
    Yoon, Young Jun
    Cho, Seongjae
    Seo, Jae Hwa
    Kang, In Man
    Park, Byung-Gook
    Lee, Jung-Hee
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [2] Rigorous Design and Analysis of Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric and Tunneling-Boost n-Layer
    Seo, Jae Hwa
    Lee, Jae Sung
    Park, Yun Soo
    Lee, Jung-Hee
    Kang, In Man
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05): : 644 - 648
  • [3] Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
    Cho, Seongjae
    Kang, In Man
    Kamins, Theodore I.
    Park, Byung-Gook
    Harris, James S., Jr.
    APPLIED PHYSICS LETTERS, 2011, 99 (24)
  • [4] Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications
    Yoon, Young Jun
    Seo, Jae Hwa
    Cho, Seongjae
    Kwon, Hyuck-In
    Lee, Jung-Hee
    Kang, In Man
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16 (02) : 172 - 178
  • [5] Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications
    Cho, Seongjae
    Kim, Hyungjin
    Jhon, Heesauk
    Kang, In Man
    Park, Byung-Gook
    Harris, James S., Jr.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2013, 1 (02): : 48 - 53
  • [6] Modeling of a vertical tunneling graphene heterojunction field-effect transistor
    Kumar, S. Bala
    Seol, Gyungseon
    Guo, Jing
    APPLIED PHYSICS LETTERS, 2012, 101 (03)
  • [7] Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer
    Eun, Hye Rim
    Yoon, Young Jun
    Seo, Jae Hwa
    Cho, Min Su
    Lee, Jung-Hee
    Kwon, Hyuck-In
    Kang, In Man
    CURRENT APPLIED PHYSICS, 2016, 16 (07) : 681 - 685
  • [8] High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5V operation
    Kim, Jin Su
    Yoon, Young Jun
    Seo, Jae Hwa
    Jang, Young In
    Lee, Jung-Hee
    Cho, Seongjae
    Yoo, Gwan Min
    Kang, In Man
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (03)
  • [9] InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate
    Yun Woo, Sung
    Jun Yoon, Young
    Hwa Seo, Jae
    Min Yoo, Gwan
    Cho, Seongjae
    Man Kang, In
    IEICE TRANSACTIONS ON ELECTRONICS, 2014, E97C (07): : 677 - 682
  • [10] Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
    Guo, Pengfei
    Yang, Yue
    Cheng, Yuanbing
    Han, Genquan
    Pan, Jisheng
    Ivana
    Zhang, Zheng
    Hu, Hailong
    Shen, Ze Xiang
    Chia, Ching Kean
    Yeo, Yee-Chia
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (09)
12345