Effect of induced strain on valence band in CdxZn1-xS wells of CdxZn1-xS/ZnS/BeyZn1-yS separate-confinement heterostructures

被引：0
|
作者：
Onodera, Chikara [1 ]
Shoji, Tadayoshi [2 ]
Hiratate, Yukio [2 ]
Taguchi, Tsunemasa [3 ]
机构：
[1] Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
[2] Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
[3] Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 07期
关键词：
Semiconductor quantum wells;
D O I：
暂无
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学科分类号：
摘要：
Journal article (JA)
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页码：5826 / 5831
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