Surface structure of Sn doped (β-Ga2O3(010) p(1x1) studied by quantitative low energy electron diffraction

被引：0

作者：

Pancotti, Alexandre ^{[1
]}

Reis, Diogo Duarte dos ^{[4
]}

Sadowski, Jerzy T. ^{[3
]}

Kilian, Alex Sandre ^{[1
]}

Boeckl, John ^{[2
]}

Soukiassian, Patrick ^{[5
]}

Lubin, Christophe ^{[5
]}

Douillard, Ludovic ^{[5
]}

Barrett, Nick ^{[5
]}

Back, Tyson ^{[2
]}

机构：

[1] Univ Fed Jatai, Acad Unit Exact & Technol Sci, Mat Grp, Jatai, Rod Br 364, Km 168, BR-75801615 Jatai, GO, Brazil

[2] Air Force Res Lab, 2179 12th St,B652-R122, Wright Patterson AFB, OH 45433 USA

[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[4] Univ Fed Mato Grosso do Sul, Inst Phys, CP 549, BR-79070900 Campo Grande, MS, Brazil

[5] Univ Paris Saclay, CEA, CNRS, SPEC, F-91191 Gif Sur Yvette, France

来源：

SURFACE SCIENCE | 2025年 / 753卷

关键词：

Gallium oxide; Surface reconstruction; Low energy electron diffraction; x-ray; photoelectron spectroscopy; RELIABILITY;

D O I：

10.1016/j.susc.2024.122653

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the surface structure of a single crystal (beta-Ga2O3(010) using quantitative Low Energy Electron Diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). The XPS measurements show spectra typical of stoichiometricGa(2)O(3) with a clean surface. LEED consistently shows a p(1x1) pattern, free of surface reconstruction. Quantitative LEED I(V) curves are acquired for 41 distinct diffraction spots. The experimental I(V) curves are compared to simulations over the first five layers. The best fits to the experimental LEED I(V) curves acquired at all diffraction spots are then used to calculate the interplanar relaxation and atomic rumpling. Significant atomic rumpling and interplanar relaxation are found over the first 5 atomic layers. As a result of rumpling a polarization of similar to 2 mu C/cm(2) develops in the topmost surface layer. The structural results are in good agreement with previous density functional theory calculations and experimental X-ray photoelectron diffraction.

引用

页数：8

共 35 条

[31] T4 site adsorption of Tl atoms in a Si(111)-(1 x 1)-Tl structure, determined by low-energy electron diffraction analysis
Noda, T
Mizuno, S
Chung, JW
Tochihara, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (3B): : L319 - L321
[32] Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films
Wu, Z. Y.
Jiang, Z. X.
Ma, C. C.
Ruan, W.
Chen, Y.
Zhang, H.
Zhang, G. Q.
Fang, Z. L.
Kang, J. Y.
Zhang, T-Y
MATERIALS TODAY PHYSICS, 2021, 17
[33] Epitaxial stabilization of single phase κ-(InxGa1-x)2O3 thin films up to x=0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD
Kneiss, M.
Hassa, A.
Splith, D.
Sturm, C.
von Wenckstern, H.
Lorenz, M.
Grundmann, M.
APL MATERIALS, 2019, 7 (10):
[34] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF ANTIPHASE DOMAIN ORDERING OF THE 2X1 RECONSTRUCTED (111)SURFACE OF CHEMICAL-VAPOR-DEPOSITED DIAMOND
KONDOH, E
TANAKA, K
OHTA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7A): : L947 - L949
[35] METAL-COMPLEXES OF FUNCTIONALIZED SULFUR-CONTAINING LIGANDS, II .1. SYNTHESIS OF RUTHENIUM(II) BENZYL-THIOSULPHINATO COMPLEXES - X-RAY STRUCTURE DETERMINATION OF CP(PH3P)2RU[S-S(O)-CH2C6H5]
WEIGAND, W
BOSL, G
ROBL, C
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES, 1992, 47 (01): : 39 - 44

← 1 2 3 4 →