Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature

被引：7

作者：

Ha, Sieu D. ^{[1
]}

Viswanath, B. ^{[1
]}

Ramanathan, Shriram ^{[1
]}

机构：

[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

关键词：

PEROVSKITES; PR; EU; SM; ND;

D O I：

10.1063/1.4729490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that a metal-insulator phase transition can be electrothermally actuated in the correlated complex oxide SmNiO3 (SNO) above room temperature from current-voltage measurements on thin film two-terminal devices. We simulate the internal temperature of SmNiO3 as a function of applied dc power by a Joule heating mechanism with substrate/electrode dissipation and find good agreement with experiment and device scaling. The results are relevant towards integrating correlated oxide phase transition functionality into semiconductor electronic/optoelectronic platforms. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729490]

引用

页数：5