The strength of wide bandgap materials for power electronics

被引：0
|
作者：
机构：
[1] Husain, Ali
来源：
Husain, Ali | 1600年 / Datateam Business Media Limited卷 / 127期
关键词：
Power semiconductor devices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 43 条
  • [31] Survey of High-Temperature Reliability of Power Electronics Packaging Components
    Khazaka, R.
    Mendizabal, L.
    Henry, D.
    Hanna, R.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (05) : 2456 - 2464
  • [32] High-power robust semiconductor electronics technologies in the new millennium
    Shenai, K
    MICROELECTRONICS JOURNAL, 2001, 32 (5-6) : 397 - 408
  • [33] Prospects of new technologies for power electronics in the 21st century
    Akagi, H
    IEEE/PES TRANSMISSION AND DISTRIBUTION CONFERENCE AND EXHIBITION 2002: ASIA PACIFIC, VOLS 1-3, CONFERENCE PROCEEDINGS: NEW WAVE OF T&D TECHNOLOGY FROM ASIA PACIFIC, 2002, : 1399 - 1404
  • [34] A Physics-Based Compact Gallium Nitride Power Semiconductor Device Model for Advanced Power Electronics Design
    Kotecha, Ramchandra M.
    Zhang, Yuzhi
    Rashid, Arman
    Zhu, Nan
    Vrotsos, Tom
    Mantooth, H. Alan
    2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2685 - 2691
  • [35] Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
    Kotecha R.M.
    Hossain M.M.
    Rashid A.U.
    Emon A.I.
    Zhang Y.
    Mantooth H.A.
    IEEE Open Journal of Power Electronics, 2021, 2 : 75 - 87
  • [36] Simulation of Switching of High-Power FETs Using the Electronics Workbench Software
    Babenko, V. P.
    Bityukov, V. K.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2019, 64 (02) : 176 - 181
  • [37] Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC
    Gunaydin, Yasin
    Jahdi, Saeed
    Alatise, Olayiwola
    Gonzalez, Jose Ortiz
    Wu, Ruizhu
    Stark, Bernard
    Hedayati, Mohammad
    Yuan, Xibo
    Mellor, Phil
    MICROELECTRONICS RELIABILITY, 2021, 125
  • [38] High-Temperature Die Attachment Using Sn-Plated Zn Solder for Power Electronics
    Park, Sungwon
    Nagao, Shijo
    Kato, Yoshitaka
    Ishino, Hiroshi
    Sugiura, Kazuhiko
    Tsuruta, Kazuhiro
    Suganuma, Katsuaki
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2015, 5 (07): : 902 - 909
  • [39] An Accurate Compact Model For Gallium Nitride Gate Injection Transistor For Next Generation of Power Electronics Design
    Kotecha, Ramchandra M.
    Zhang, Yuzhi
    Wallace, Andrea
    Zhu, Nan
    Rashid, Arman
    Vrotsos, Tom
    Mantooth, H. Alan
    2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL), 2017,
  • [40] Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging
    Locatelli, Marie-Laure
    Khazaka, Rabih
    Diaham, Sombel
    Cong-Duc Pham
    Bechara, Mireille
    Dinculescu, Sorin
    Bidan, Pierre
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2281 - 2288
12345