Structural and optical properties of ZnCdO/ZnO multiple quantum wells grown on sapphire substrates using pulsed laser deposition

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[1] Jiang, J.
[2] Zhu, L.P.
[3] He, H.P.
[4] Li, Y.
[5] Guo, Y.M.
[6] Cao, L.
[7] Li, Y.G.
[8] Wu, K.W.
[9] Zhang, L.Q.
[10] Ye, Z.Z.
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Zhu, L.P. (zlp1@zju.cdu.cn) | 1600年 / American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States卷 / 112期
关键词：
High quality Zn0.92Cd0.08O/ZnO multiple quantum wells with smooth interfaces have been prepared on c-plane sapphire substrates by pulsed laser deposition. The periodic structure has been characterized by scanning transmission electron microscope and energy dispersive x-ray spectroscopy line scans. The temperature dependent photoluminescence of Zn 0.92Cd0.08O/ZnO exhibits an inconspicuous S-shaped property due to a combined effect of the slightly disordered ZnCdO alloy. We can observe both quantum confinement effects and quantum-confinement Stark effect in the quantum wells. We can modulate the well emission energy from 2.90 to 3.085 eV by varying the well thickness at room temperature. © 2012 American Institute of Physics;
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