Electroluminescence afterglow from indium tin oxide/Si-rich SiO 2/p-Si structure

被引：1
作者：
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
机构：
[1] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Chin. Phys. Lett. | 2006年 / 5卷 / 1306-1309期
关键词：
Silica - Light - Amorphous silicon - Optical pumping - Tin oxides - Indium compounds;
D O I：
10.1088/0256-307X/23/5/067
中图分类号：
学科分类号：
摘要：
Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence (EL) of the Si-rich SiO2 (SRO) material. The obvious peaks at ∼1050 nm and ∼1260 nm in the EL are ascribed to localized state transitions of amorphous Si (α-Si) clusters. The EL afterglow associated with α-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the α-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of α-Si clusters. © 2006 Chinese Physical Society and IOP Publishing Ltd.
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页码：1306 / 1309
页数：3
相关论文
共 12 条
[1]  
Shimizu-Iwayama T., Fujita K., Nakao S., Saitoh K., Fujita T., Itoh N., J. Appl. Phys., 75, 12, (1994)
[2]  
Franzo G., Irrera A., Moreira E.C., Miritello M., Iacona F., Sanfilippo D., Di Stefano G., Fallica P.G., Priolo F., Appl. Phys., 74, (2002)
[3]  
Pavesi L., Dal Negro L., Mazzoleni C., Franzo G., Priolo F., Nature, 408, 6811, (2000)
[4]  
Loni A., Simmons A.J., Cox T.I., Calcott P.D.J., Canham L.T., Electron. Lett., 31, 15, (1995)
[5]  
Lalic N., Linnros J., J. Lumin., 80, 1-4, (1999)
[6]  
Iacona F., Bongiorno C., Spinella C., Boninelli S., Priolo F., J. Appl. Phys., 95, 7, (2004)
[7]  
Pacifici D., Franzo G., Iacona F., Boninelli S., Irrera A., Miritello M., Priolo F., Mater. Sci. Engin., 105, 1-3, (2003)
[8]  
Wang X.X., Zhang J.G., Ding L., Cheng B.W., Ge W.K., Yu J.Z., Wang Q.M., Phys. Rev., 72, 19, (2005)
[9]  
Street R.A., Adv. Phys., 25, 4, (1976)
[10]  
Street R.A., Biegelsen D.K., Weisfield R.L., Phys. Rev., 30, 10, (1984)
12