Origin of deep level defect related photoluminescence in annealed InP

被引：0

作者：

Zhao, Youwen ^{[1
]}

Dong, Zhiyuan ^{[1
]}

Miao, Shanshan ^{[2
]}

Deng, Aihong ^{[2
]}

Yang, Jun ^{[2
]}

Wang, Bo ^{[2
]}

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

[2] Department of Applied Physics, Faculty of Science, Sichuan University, Chengdu 610065, China

来源：

Journal of Applied Physics | 2006年 / 100卷 / 12期

关键词：

Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL); thermally stimulated current (TSC); deep level transient spectroscopy (DLTS); and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3 eV PL emission and a defect at EC -0.18 eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP. © 2006 American Institute of Physics;

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摘要：

Journal article (JA)

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