Bandwidth enhancement of InP/InGaAs waveguide uni-traveling carrier photodetectors for over 100 GHz bandwidth using impedance lines

被引：0
作者：
Ye, Han [1 ]
Han, Qin [1 ,2 ]
Wang, Shuai [1 ]
Geng, Liyan [1 ]
Chu, Yimiao [1 ,3 ]
Zheng, Yu [1 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Optoelect Mat & Devices, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2025年 / 181卷
关键词：
Uni-traveling carrier; Waveguide photodetector; Impedance line; Equivalent circuit; Ultra-low dark current; HIGH-POWER; CIRCUIT MODEL; HIGH-SPEED; PHOTODIODES;
D O I：
10.1016/j.optlastec.2024.111942
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Uni-traveling carrier photodetectors are highly competitive for the next generation over 200Gbaud/lambda ultra-fast data fiber-optic communication systems. An impedance line is integrated to the photodetector for a 100 % bandwidth enhancement within a wide range of device areas. A modified equivalent circuit model is proposed to explain the resistance matching and inductive peaking effect of the impedance line. The fabricated chip exhibits a high bandwidth of 140 GHz with an ultra-low dark current of 0.078nA for the 50 mu m2 photodetector, and an external responsivity of 0.262A/W.
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页数：6
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