Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films

被引：0

作者：

Oshio, T. ^{[1
]}

Masuko, K. ^{[1
]}

Ashida, A. ^{[1
]}

Yoshimura, T. ^{[1
]}

Fujimura, N. ^{[1
]}

机构：

[1] Graduate School of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan

来源：

Journal of Applied Physics | 2008年 / 103卷 / 09期

关键词：

The Mn doping effects on the electric and dielectric properties of ZnO epitaxial films were studied. To optimize the stoichiometry of undoped ZnO film prepared by pulsed laser deposition; we evaluated the intensity ratio of the optical emission from excited oxygen atoms (O*) and excited zinc atoms (Zn*) generated by ablating a ZnO ceramic target in plume. The leakage current of undoped ZnO film decreased with an increase of the ratio I (O777*) I (Zn335*). Mn doping of ZnO was also effective in decreasing the leakage current. The ZnO:4 at. % Mn had a very small leakage current; eight orders of magnitude less than that of undoped ZnO. With a Mn concentration above 4 at. %; on the other hand; the leakage current was increased. The activation energy in ZnO:Mn obtained from the temperature dependence of the ac conductivity revealed that oxygen vacancy was responsible for the large current at the Mn concentration below 2 at. %. For the sample with the Mn concentration of 2-3 at. %; dominant conduction in ZnO:Mn epitaxial films originated from the interstitial Zn. When the Mn concentration was above 4 at. %; the conduction was governed by the substitution of Zn atoms in the oxygen site. Impedance analysis revealed that the origin for large resistivity of ZnO:Mn films was not the ZnO/electrode interface but the bulky part of the films. © 2008 American Institute of Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[1] Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films
Oshio, T.
Masuko, K.
Ashida, A.
Yoshimura, T.
Fujimura, N.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[2] Mn doping effects on dielectric properties of ZnO epitaxial films
Oshio, T.
Ashida, A.
Yoshimura, T.
Fujimura, N.
TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1, 2006, 31 (01): : 189 - 192
[3] Effect of Mn doping on structure, the dielectric and electric properties of BCZT ceramics
Khmiri, Ismail
Kriaa, Issa
Khemakhem, Hamadi
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (04):
[4] Effect of Mn doping on structure, the dielectric and electric properties of BCZT ceramics
Ismail Khmiri
Issa Kriaa
Hamadi Khemakhem
Applied Physics A, 2021, 127
[5] ELECTRIC PROPERTIES OF EPITAXIAL AND POLYCRYSTAL FILMS ZNO
RABADANOV, RA
SEMILETO.SA
BAGAMADO.AM
KRISTALLOGRAFIYA, 1974, 19 (04): : 850 - +
[6] Effect of Li doping on the electric and pyroelectric properties of ZnO thin films
Trinca, L. M.
Galca, A. C.
Boni, A. G.
Botea, M.
Pintilie, L.
APPLIED SURFACE SCIENCE, 2018, 427 : 29 - 37
[7] Influence of isovalent Cd doping concentration and temperature on electric and dielectric properties of ZnO films
Altun, Busra
Ajjaq, Ahmad
Cagirtekin, Ali Orkun
Er, Irmak Karaduman
Sarf, Fatma
Acar, Selim
CERAMICS INTERNATIONAL, 2021, 47 (19) : 27251 - 27266
[8] Doping of bonds into ZnO films and the changes of their electric properties
Kobayashi, K
Yamazaki, T
Hatta, Y
Tomita, Y
ELECTROCERAMICS IN JAPAN VII, 2004, 269 : 79 - 82
[9] Effect of Mn doping on the nanostructure and optical properties of ZnO films synthesized by magnetron sputtering
Wu, Z. F.
Wu, X. M.
Zhuge, L. J.
Hong, B.
Yang, X. M.
Yu, T.
He, J. J.
Chen, Q.
APPLIED SURFACE SCIENCE, 2010, 256 (07) : 2259 - 2262
[10] Effect Of Doping Concentrations On The Properties Of Mn-doped ZnO Nanostructured Thin Films
Rashid, Affa Rozana Abd
Shaari, Sahbudin
Menon, P. Susthitha
4TH ASIAN PHYSICS SYMPOSIUM: AN INTERNATIONAL EVENT, 2010, 1325 : 99 - 102

← 1 2 3 4 5 →