Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE

被引：0

作者：

Jiao Gang-Chenga ^{[1
,2
,3
]}

She Feng ^{[2
,3
]}

Guo Hui ^{[2
,3
]}

Hu Cang-Lu ^{[2
,3
]}

Zhang Lian-Dong ^{[2
,3
]}

Mia Zhuang ^{[2
,3
]}

Cheng Hong-Chang ^{[2
,3
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[2] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Peoples R China

[3] North Night Vis Technol Grp Co Ltd, Kunming 650223, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2014年 / 8卷 / 11-12期

关键词：

GaAsP; Be doping; Molecular beam epitaxy; Crystalline quality; MOLECULAR-BEAM EPITAXY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs1-xPx/GaAs compound materials are used in the Negative electron affinity (NEA) III-V semiconductor photocathode for 532 nm sensitive. The author studies 880 degrees C, 900 degrees C and 920 degrees C Be cell temperature for material performance influence by HR XRD, AFM, ECV and Hall system. Below the 900 degrees C of the Be cell, the material performance were improved, which resulted in smaller surface roughness and lower threading dislocation density. Since Be doping is essential for GaAsP photocathode of GENIII imaging intensifier, these results are useful for improving the GaAsP photocathode material properties and performance of device.

引用

页码：1104 / 1106

页数：3