Transient electromagnetically induced transparency in InGaAs quantum dots

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作者：
Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Switzerland [1 ]
不详 [2 ]
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来源：
Optics InfoBase Conference Papers | 2008年
关键词：
Semiconducting indium gallium arsenide;
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