Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers

被引：0
|
作者：
Thörnberg, Jimmy [1 ]
Polisski, Gennadi [2 ]
Carria, Egidio [1 ]
Isacson, Mathias [1 ]
Magnusson, Björn [1 ]
机构：
[1] STMicroelectronics Silicon Carbide AB, Ramshällsvägen 15, Norrköping,602 38, Sweden
[2] Semilab, Coschützer Str. 70, Freital,01705, Germany
来源：
Defect and Diffusion Forum | 2024年 / 434卷
关键词：
Silicon wafers;
D O I：
10.4028/p-X8bhbo
中图分类号：
学科分类号：
摘要：
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页码：111 / 115
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