Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

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NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan [1 ]
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Japanese Journal of Applied Physics | 2008年 / 47卷 / 8 PART 2期
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We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10m and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD. © 2008 The Japan Society of Applied Physics;
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页码：6739 / 6743
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