600V trench-gate FS-IGBT with micro-P structure

被引：1

作者：

Nakano H. ^{[1
]}

Onozawa Y. ^{[1
]}

Kawano R. ^{[1
]}

Yamazaki T. ^{[1
]}

Seki Y. ^{[1
]}

机构：

[1] Fuji Electric Systems Co., Ltd., Matsumoto, Nagano 390-0821, 4-18-1, Tsukama

来源：

IEEJ Transactions on Electronics, Information and Systems | 2010年 / 130卷 / 06期

关键词：

EMI noise; Floating p-base layer; Turn-off oscillation; Turn-on di/dt controllability;

D O I：

10.1541/ieejeiss.130.951

中图分类号：

学科分类号：

摘要：

This paper describes the next generation 600V trench-gate IGBT utilizing the Micro-P structure to realize low noise and low power dissipation. We have achieved "better turn-on di/dt controllability", "oscillation free turn-off " and "improved Von-Eoff trade-off relationship" in the 600 V IGBTs. In a typical inverter operation, the new chip has realized 10% lower power dissipation and the temperature difference between junction and case (dTj-c) can be reduced by 2.5deg.C. © 2010 The Institute of Electrical Engineers of Japan.

引用

页码：951 / 954+7

共 3 条

[1]

Mount G., Economic outlook: Growth and risks in a gloabal context, CSM Insider Series'07

[2]

Laska T., Munzer M., Pfirsch F., Shaeffer C., Schmidt T., The field stop IGBT (FS IGBT) - A new power device concept with a grate improvement potential, ISPSD, pp. 355-358, (2000)

[3]

Onozawa Y., Nakano H., Otsuki M., Yoshikawa K., Miyasaka T., Seki Y., Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss, Proc., 19, pp. 13-16, (2007)

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