Laser damage of optical film with the combined irradiation of 1064 nm and 532 nm pulse

被引：6

作者：

Zhou, Ming ^{[1
,2
]}

Zhao, Yuan'an ^{[1
]}

Li, Dawei ^{[1
]}

Fan, Zhengxiu ^{[1
]}

Shao, Jianda ^{[1
]}

机构：

[1] Key Laboratory of Material for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

[2] Graduate Universities, Chinese Academy of Sciences

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2009年 / 36卷 / 11期

关键词：

Defects; Different wavelength; Laser-induced damage threshold; Thin film;

D O I：

10.3788/CJL20093611.3050

中图分类号：

学科分类号：

摘要：

A testing device of laser-induced damage threshold (LIDT) with the combined irradiation of different wavelength pulse was built. The damage morphology and the laser-induced damage threshold of 1064 nm and 532 nm anti-reflection film (ARF) were researched by 1064 nm pulse only, 532 nm pulse only and 1064 nm with 532 nm pulse combined irradiation. The result showed that the damage morphology of samples caused by 1064 nm and 532 nm pulse combined irradiation was similar with which of the 532 nm pulse, and the 532 nm pulse plays a leading role in the factors that induce damage. The LIDT of 1064 nm pulse is higher than one of 532 nm pulse, that of 1064 nm and 532 nm pulse combined irradiation is in the range between 1064 nm pulse only and 532 nm pulse only.

引用

页码：3050 / 3054

页数：4

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