Electrical Properties of Dual-Gate, Ultrashort Monolayer WS2 Transistors

被引：0

作者：

Zhan, Li ^{[1
]}

Tang, Jiachen ^{[1
]}

Li, Shuaixing ^{[1
]}

Li, Shuo ^{[1
]}

Shi, Yi ^{[1
]}

Li, Songlin ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Two dimensional semiconductors; monolayer WS2; short-channel FETs; field-effect transistors; Ohmic contact; 2-DIMENSIONAL MATERIALS;

D O I：

10.1109/LED.2024.3466904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the observation of record high current density in ultrashort dual-gate (DG) monolayer chemical vapor deposition WS2 field-effect transistors (FETs). The DG FETs were defined by means of a seed layer for depositing the top-gate high-kappa dielectric. By using semi-metallic Sb as contacts, we achieved a low contact resistance of 550 Omega . mu m. A statistical study was conducted for 150 FETs with scaling channel length from 1 mu m down to 15 nm. A record high on-state current of 630 mu A/mu m was demonstrated at room temperature (680 mu A/mu m at 8 K) with a 1 V bias. This work unveils the tremendous potential of monolayer WS2 for ultimate downscaling solutions in future nanoelectronics.

引用

页码：2411 / 2414

页数：4

共 24 条

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