Full D-Band Transmit-Receive Module for Phased Array Systems in 130-nm SiGe BiCMOS

被引：30

作者：

Karakuzulu A. ^{[1
]}

Eissa M.H. ^{[1
]}

Kissinger D. ^{[2
]}

Malignaggi A. ^{[1
]}

机构：

[1] Circuit Design Department, IHP Microelectronics, Frankfurt

[2] Institute of Electronic Devices and Circuits, Ulm University, Ulm

来源：

IEEE Solid-State Circuits Letters | 2021年 / 4卷

基金：

欧盟地平线“2020”;

关键词：

5G; 6G; broadband; D-band; integrated circuits (IC); millimeter-wave (mm-wave); silicon-germanium (SiGe) BiCMOS;

D O I：

10.1109/LSSC.2021.3054512

中图分类号：

学科分类号：

摘要：

This letter presents a D-band (110 to 170 GHz) transmit-receive module in 0.13- μm silicon-germanium (SiGe) BiCMOS for phased-array applications. The module includes single-pole double throw (SPDT) switches, a low noise amplifier (LNA), a power amplifier (PA), and two variable gain amplifiers (VGAs). A broadband quarter-wave SPDT is designed with power handling capacity of 17 dBm and a state-of-the-art insertion loss of 2 dB at 140 GHz. The three-stage cascode LNA and PA and the two-stage phase-compensated VGA cover the entire D-band. In the receive mode, the module has a measured peak gain of 28.3 dB with a 3-dB bandwidth (BW) of 110-170 GHz, along with a minimum noise figure (NF) of 9 dB (at 120 GHz) and an IP1dB of -21 dBm. In the transmit mode, the peak gain is 22.4 dB within a 3-dB BW of 113-170 GHz, while the OP1dB is 7 dBm and the P sat9.5 dBm at 140 GHz. © 2018 IEEE.

引用

页码：40 / 43

页数：3

共 15 条

[1]

Dore J.-B., Et al., Technology roadmap for beyond 5G wireless connectivity in D-band, Proc. 2nd 6G Wireless Summit (6G SUMMIT), pp. 1-5, (2020)

[2]

Radio Frequency Channel/block Arrangements for Fixed Service Systems Operating in the Bands 130-134 GHz, 141-148.5 GHz, 151.5-164 GHz and 167-174.8 GHz, (2018)

[3]

Lee S., Et al., An 80Gb/s 300GHz-band single-chip CMOS transceiver, IEEE J. Solid-State Circuits, 54, 12, pp. 3577-3588, (2019)

[4]

Rodriguez-Vazquez P., Grzyb J., Heinemann B., Pfeiffer U.R., A 16-QAM 100-Gb/s 1-M wireless link with an EVM of 17% at 230 GHz in an SiGe technology, IEEE Microw. Wireless Compon. Lett., 29, 4, pp. 297-299, (2019)

[5]

Eissa M.H., Maletic N., Grass E., Kraemer R., Kissinger D., Malignaggi A., 100 Gbps 0.8-m wireless link based on fully integrated 240 GHz IQ transmitter and receiver, Proc. IEEE MTT-S Int. Microw. Symp. (IMS), pp. 627-630, (2020)

[6]

Hamada H., Et al., 300-GHz 120-Gb/s wireless transceiver with highoutput-power and high-gain power amplifier based on 80-nm InP-HEMT technology, Proc. IEEE BiCMOS Compound Semicond. Integr. Circuits Technol. Symp. (BCICTS), pp. 1-4, (2019)

[7]

Tokgoz K., Et al., A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver, Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC), pp. 168-169, (2018)

[8]

Karakuzulu A., Malignaggi A., Kissinger D., Low insertion loss D-band SPDT switches using reverse and forward saturated SiGe HBTs, Proc. IEEE Radio Wireless Symp. (RWS), pp. 1-3, (2019)

[9]

Karakuzulu A., Eissa M.H., Kissinger D., Malignaggi A., A broadband 110-170-GHz stagger-tuned power amplifier with 13.5-dBm Psat in 130-nm SiGe, IEEE Microw. Wireless Compon. Lett., 31, 1, pp. 56-59, (2021)

[10]

Karakuzulu A., Eissa M.H., Kissinger D., Malignaggi A., Broadband 110-170 GHz true time delay circuit in a 130-nm SiGe BiCMOS technology, Proc. IEEE MTT-S Int. Microw. Symp. (IMS), pp. 775-778, (2020)

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