The simulation and testing analysis on low-frequency magnetic shielding effectiveness of metal materials

被引：0
|
作者：
School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing [1 ]
Jiangsu, China
机构：
来源：
Dianbo Kexue Xuebao | / 4卷 / 673-678期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Iron alloys - Electromagnetic shielding - Materials testing - Magnetic materials - Magnetic shielding
引用
收藏
相关论文
共 4 条
  • [1] Analysis of the low-frequency noise reduction in Si(100) metal-oxide-semiconductor field-effect transistors
    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 4 PART 2
  • [2] Mechanical design and structural analysis for LiteBIRD low-frequency telescope and payload module
    Oguri, Shugo
    Dotani, Tadayasu
    Isshiki, Masahito
    Iwabuchi, Shota
    Kaga, Tooru
    Matsuda, Frederick Takayuki
    Miyazaki, Yasuyuki
    Mot, Baptiste
    Nagata, Ryo
    Narasaki, Katsuhiro
    Ogawa, Hiroyuki
    Okudaira, Toshiaki
    Odagiri, Kimihide
    Prouvé, Thomas
    Roudil, Gilles
    Satoh, Yasutaka
    Sekimoto, Yutaro
    Suzuki, Toyoaki
    Watanuki, Kazuya
    Yoshida, Seiji
    Yoshihara, Keisuke
    Proceedings of SPIE - The International Society for Optical Engineering, 2022, 12180
  • [3] PHASE II - FREQUENCY DOMAIN ANALYSIS OF LOW-FREQUENCY OSCILLATIONS IN LARGE ELECTRIC POWER SYSTEMS.
    Byerly, R.T.
    Sherman, D.E.
    Bennon, R.J.
    Electric Power Research Institute (Report) EPRI EL, 1982,
  • [4] Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors
    Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 10 PART 2
1