Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers

被引：1

作者：

Maximov, M. V. ^{[1
]}

Shernyakov, Yu. m. ^{[2
]}

Kornyshov, G. O. ^{[2
]}

Beckman, A. A. ^{[2
]}

Zubov, F. I. ^{[1
]}

Kharchenko, A. A. ^{[1
]}

Payusov, A. S. ^{[2
]}

Mintairov, S. A. ^{[2
]}

Kalyuzhnyy, N. A. ^{[2
]}

Dubrovskii, V. G. ^{[3
]}

Gordeev, N. Yu. ^{[2
]}

机构：

[1] Alferov Univ, St Petersburg 194021, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

[3] St Petersburg State Univ, Fac Phys, St Petersburg 199034, Russia

来源：

OPTICS LETTERS | 2024年 / 49卷 / 21期

关键词：

THRESHOLD CHARACTERISTICS; SEMICONDUCTOR-LASER; POWER;

D O I：

10.1364/OL.532606

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We study the current-controlled lasing switching from the ground state (GS) to the excited state (ES) transition in broad-area (stripe width 100 mu m) InGaAs/GaAs quantum well-dot (QWD) and quantum well (QW) lasers. In the lasers with one QWD layer and a 0.45 mu m-thick GaAs waveguide, pure GS lasing takes place up to an injection current as high as 8 A (40 kA/cm2). In contrast, in QW lasers with a similar design, ES lasing emerges already at 3 A (15 kA/cm2). The ES lasing in the QWD lasers is observed only in the devices with a waveguide thickness of 0.78 mu m that supports a 2nd order transverse mode at the wavelength of the ES transition. Increasing the modal gain in the lasers with 0.78 mu m-thick waveguide by using two QWD layers in the active region suppresses the ES lasing. (c) 2024 Optica Publishing Group. All (AI) training, and similar technologies, are reserved.

引用

页码：6213 / 6216

页数：4

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