Photoemission properties of GaAs (100) β 2 (2 × 4) and GaAs (100) (4 × 2) reconstruction phases

被引：0
作者：
Yu, Xiaohua [1 ]
Ge, Zhonghao [1 ]
Chang, Benkang [1 ]
机构：
[1] Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology
来源：
Chinese Optics Letters | 2013年 / 11卷 / SUPPL.2期
关键词：
Optical properties;
D O I：
10.3788/COL201311.S21602
中图分类号：
学科分类号：
摘要：
Using the first-principles plane-wave pseudopotential method, based on the density function theory, the electron structure and optical properties of GaAs (100) β 2 (2 × 4) and GaAs (100) (4 × 2) reconstructions are calculated. The formation energy of As-rich β 2 (2 × 4) reconstruction is minus and the formation energy of Ga-rich (4 × 2) reconstruction is positive; As-rich β 2 (2 × 4) reconstruction is stable and Ga-rich (4 × 2) reconstruction is unstable. Ga-rich (4 × 2) reconstruction owns lower work function. The electrons at two reconstructions both move into the bulk and form a band-binding region. Both the absorption and the reflectivity of As-rich β 2 (2 × 4) reconstruction are smaller than the Ga-rich (4 × 2) reconstruction. Asrich β 2 (2 × 4) reconstruction is more benefit for the movement of photos through the surface to emit photoelectrons. © 2013 Chinese Optics Letters.
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