Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

被引：0

作者：

Wang, Yiyi ^{[1
]}

Özcan, Ahmet S. ^{[1
,3
]}

Sanborn, Christopher ^{[1
]}

Ludwig, Karl F. ^{[1
]}

Bhattacharyya, Anirban ^{[2
]}

Chandrasekaran, Ramya ^{[2
]}

Moustakas, Theodore D. ^{[2
]}

Zhou, Lin ^{[3
]}

Smith, David J. ^{[3
]}

机构：

[1] Physics Department, Boston University, Boston, MA 02215, United States

[2] Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, United States

[3] IBM Microelectronics, East Fishkill, NY

来源：

Journal of Applied Physics | 2007年 / 102卷 / 07期

关键词：

25;

D O I：

暂无

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学科分类号：

摘要：

Journal article (JA)

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