Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

被引：0
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作者：
Kim, Jin Soo [1 ]
Lee, Cheul-Ro [1 ]
Lee, In Hwan [1 ]
Leem, Jae-Young [2 ]
Kim, Jong Su [3 ]
Ryu, Mee-Yi [4 ]
机构：
[1] Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Chonbuk, Korea, Republic of
[2] School of Nano Engineering, Inje University, Gimhae 621-749, Korea, Republic of
[3] Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
[4] Department of Physics, Kangwon National University, Chuncheon 200-701, Korea, Republic of
来源：
Journal of Applied Physics | 2007年 / 102卷 / 07期
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