Preparation and electrical properties of Pb(Zr0.52Ti0.48)O3 films deposited on LaNiO3 and Pt electrodes

被引：0
作者：
机构：
[1] School of Civil Engineering, Beijing Jiaotong University, Beijing
[2] College of Architecture and Civil Engineering, North China University of Technology, Beijing
[3] College of Mechanical and Electrical Engineering, North China University of Technology, Beijing
来源：
Zhao, Quan-Liang | 1600年 / Journal of Functional Materials卷 / 45期
关键词：
Dielectric properties; Ferroelectric properties; Lead zirconate titanate; Sol-gel;
D O I：
10.3969/j.issn.1001G9731.2014.17.015
中图分类号：
学科分类号：
摘要：
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully prepared by sol-gel on LaNiO3/Si and Pt/Ti/SiO2/Si substrates. The effects of LaNiO3 (LNO) and Pt bottom electrodes on microstructures and electrical properties of PZT films were discussed. X-ray diffraction (XRD) analysis shows that PZT/LNO films was preferred highly (100) orientation, while PZT/Pt orients (100) and (111). This result means electrodes have effects on the growth-orientations of PZT films. Meanwhile, the grain size of PZT/LNO films was more uniform than that of PZT/Pt films. It was observed that the remnant polarizations of PZT/LNO and PZT/Pt films were 24.4 and 15.3 μC/cm2 and the average corresponding coercive field are 130.90 and 243.23 kV/cm, respectively. Their relative dielectric constants were 1125 and 453 at the frequency of 1 kHz. The leakage currents of PZT/LNO and PZT/Pt films were about in the order of 10-5 and 10-2 magnitudes at an applied electric field of 100 kV/cm. The ferroelectric fatigue was also improved by using LNO bottom electrode. These results show that PZT/LNO thin films has better ferroelectric and dielectric properties, which could provide a widely application in ferroelectric and dielectric devices.
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页码：17070 / 17074
页数：4
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