Electrical and optical properties of Cu2ZnSnS4 thin films prepared for solar cell absorber

被引：0

作者：

School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048, China ^{[1
]}

不详 ^{[2
]}

机构：

来源：

Pan Tao Ti Hsueh Pao | 2007年 / SUPPL.卷 / 337-340期

关键词：

Copper compounds - Crystal structure - Electric properties - Energy gap - Light absorption - Optical properties - Semiconducting tin compounds - Solar cells - Thin films - Ultraviolet visible spectroscopy - Vacuum evaporation - X ray diffraction analysis;

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摘要：

Cu2ZnSnS4(CZTS) thin films were successfully prepared by sulfurization of vacuum evaporating Cu/Sn/ZnS precursors on soda-lime glass substrate. The crystallographic structures of the samples were determined by X-ray diffractometer. The electrical and optical properties were analyzed by Hall measurement and UV-VIS spectrophotometer. The influence of the predicted atomic ratio on electrical and optical properties of CZTS thin films was discussed. The single phase stannite-type structure CZTS thin films possesses the absorption coefficient more than 104 cm-1, band gap energy of about 1.51 eV, low electrical resistivity and high mobility, so this thin film is suitable to the use as the absorber in thin film solar cells.

引用

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