Electrical and optical properties of Cu2ZnSnS4 thin films prepared for solar cell absorber

被引：0

作者：

School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048, China ^{[1
]}

不详 ^{[2
]}

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来源：

Pan Tao Ti Hsueh Pao | 2007年 / SUPPL.卷 / 337-340期

关键词：

Copper compounds - Crystal structure - Electric properties - Energy gap - Light absorption - Optical properties - Semiconducting tin compounds - Solar cells - Thin films - Ultraviolet visible spectroscopy - Vacuum evaporation - X ray diffraction analysis;

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摘要：

Cu2ZnSnS4(CZTS) thin films were successfully prepared by sulfurization of vacuum evaporating Cu/Sn/ZnS precursors on soda-lime glass substrate. The crystallographic structures of the samples were determined by X-ray diffractometer. The electrical and optical properties were analyzed by Hall measurement and UV-VIS spectrophotometer. The influence of the predicted atomic ratio on electrical and optical properties of CZTS thin films was discussed. The single phase stannite-type structure CZTS thin films possesses the absorption coefficient more than 104 cm-1, band gap energy of about 1.51 eV, low electrical resistivity and high mobility, so this thin film is suitable to the use as the absorber in thin film solar cells.

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