Hot oscillatory pressing of SiC ceramics with B4C and C as sintering additives

被引：3

作者：

Hao, Bingqian ^{[1
]}

Fan, Lei ^{[1
,2
]}

Li, Kaiyang ^{[1
]}

Fu, Yishuai ^{[1
]}

Guo, Xiaoqin ^{[1
]}

Guan, Li ^{[1
]}

Yang, Shoulei ^{[1
]}

Zhang, Mengwen ^{[1
]}

Sun, Dejian ^{[1
]}

An, Linan ^{[3
]}

机构：

[1] Zhengzhou Univ Aeronaut, Sch Mat Sci & Engn, Zhengzhou 450015, Henan, Peoples R China

[2] Zhengzhou Univ Aeronaut, Henan Key Lab Aeronaut Mat & Applicat Technol, Zhengzhou 450046, Henan, Peoples R China

[3] Dongguan Univ Technol, Sch Mech Engn, Dongguan 523808, Guangdong, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2024年 / 50卷 / 24期

基金：

中国国家自然科学基金;

关键词：

Silicon carbide; Hot oscillatory pressing; Densification; Mechanical properties; Stacking faults; MECHANICAL-PROPERTIES; SILICON; TEMPERATURE; BEHAVIOR; HARDNESS; AL2O3; CREEP; PHASE; DENSE; Y2O3;

D O I：

10.1016/j.ceramint.2024.10.212

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC ceramics with 0.5 wt% B4C and 0.5 wt% C as sintering additives were prepared by hot oscillatory pressure (HOP) and hot pressure (HP). The mechanical properties and microstructures of the resultant ceramics were investigated. The results showed that the oscillatory pressure could effectively suppress the abnormal growth of SiC grains and promote the formation of high-density dislocation and stacking faults. The hardness of SiC ceramics made by HOP at 2000oC reached 28.9 GPa, which was much higher than that (25.9 GPa) of the sample made by HP at the same temperature. The current study suggests that HOP is a promising technique for preparing high-performance SiC ceramics.

引用

页码：53628 / 53634

页数：7

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