In-situ investigation into the atomic-scale removal behavior of gallium nitride

The process of elimination at the atomic level stands as the paramount step in crafting ultra-smooth gallium nitride (GaN) substrates. However, this delicate removal mechanism presents a notable challenge. In this study, we employed a scraping technique utilizing atomic force microscope (AFM) probe manipulation to conduct an insitu examination of atomic-scale removal behaviors. Through in-situ regular imaging, we uncovered the principles underlying atomic-scale removal. We systematically explored how scraping and imaging techniques impacted surface topography and the behavior of atomic step-terraces removal. Our findings indicated that abrasives knocking facilitates the emergence of atomic step-terraces, while sliding removal techniques hinder the structure. During the scraping process, both the upper and lower sections of the atomic step-terraces were simultaneously eliminated, with material removal rate (MRR) being slower at the bottom. To validate our in-situ observations, we conducted polishing experiments. Furthermore, the coefficient of friction (COF) recorded during chemical mechanical polishing offered insights into the frictional disparities of abrasives on the GaN surface, thereby shedding light on the atomic-scale removal mechanism.