共 50 条
- [41] Characterisation of GaN-In x Ga1-x N quantum-well lasers APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 96 (2-3): : 465 - 469
- [44] Origin of ultraviolet electroluminescence in n-ZnO/p-GaN and n-MgZnO/p-GaN heterojunction light-emitting diodes PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (12): : 2751 - 2755
- [48] Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors Wuli Xuebao/Acta Physica Sinica, 2008, 57 (07): : 4570 - 4574