p-GaN/Al0.35Ga0.65N/GaN quantum-well ultraviolet Schottky photodetector

被引:0
|
作者
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | 2006年 / 10卷 / 1861-1865期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Schottky diodes based on nanocrystalline p-GaN and n-GaN in thin film form
    Das, S. N.
    Pal, A. K.
    VACUUM, 2007, 81 (07) : 843 - 850
  • [32] Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
    Gleize, J
    Demangeot, F
    Frandon, J
    Renucci, MA
    Kuball, M
    Grandjean, N
    Massies, J
    THIN SOLID FILMS, 2000, 364 (1-2) : 156 - 160
  • [33] High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer
    廉海峰
    王国胜
    陆海
    任芳芳
    陈敦军
    张荣
    郑有炓
    Chinese Physics Letters, 2013, 30 (01) : 173 - 175
  • [34] GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
    Hofstetter, D
    Schad, SS
    Wu, H
    Schaff, WJ
    Eastman, LF
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 572 - 574
  • [35] 32 x 32 ultraviolet Al0.1Ga0.9N/GaN p-i-n photodetector array
    Yang, B
    Heng, K
    Li, T
    Collins, CJ
    Wang, S
    Dupuis, RD
    Campbell, JC
    Schurman, MJ
    Ferguson, IT
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (11) : 1229 - 1231
  • [36] Emission Efficiency Dependence on the p-GaN Thickness in a High-Indium InGaN/GaN Quantum-Well Light-Emitting Diode
    Liao, Che-Hao
    Chen, Chih-Yen
    Chen, Horng-Shyang
    Chen, Kuang-Yu
    Chung, Wei-Lun
    Chang, Wen-Ming
    Huang, Jeng-Jie
    Yao, Yu-Feng
    Kiang, Yean-Woei
    Yang, Chih-Chung
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (23) : 1757 - 1759
  • [37] High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer
    Lian Hai-Feng
    Wang Guo-Sheng
    Lu Hai
    Ren Fang-Fang
    Chen Dun-Jun
    Zhang Rong
    Zheng You-Dou
    CHINESE PHYSICS LETTERS, 2013, 30 (01)
  • [38] Quantum yield of GaN and (Ga, Al)N band-gap graded ultraviolet p-n detectors
    Plucinski, KJ
    Malachowski, MJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 153 - 156
  • [39] High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer
    Janardhanam, V.
    Jyothi, I.
    Zumuukhorol, M.
    Yuk, Shim-Hoon
    Shim, Kyu-Hwan
    Choi, Chel-Jong
    SURFACES AND INTERFACES, 2021, 27
  • [40] A polarization mismatched p-GaN/p-Al0.25Ga0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa
    张一丹
    楚春双
    杭升
    张勇辉
    郑权
    李青
    毕文刚
    张紫辉
    Chinese Physics B, 2023, (01) : 44 - 49